Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires
نویسندگان
چکیده
منابع مشابه
Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires
The geometric structures, electronic and magnetic properties of Mn-doped ZnO nanowires were investigated using density functional theory. The results indicated that all the calculated energy differences were negative, and the energy of the ground state was 0.229 eV lower than ferromagnetic coupling, which show higher stability in antiferromagnetic coupling. The calculated results indicated that...
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Mn doped ZnO nanowires have been synthesized using a simple autocombustion method. The as-synthesized Mn doped ZnO nanowires were characterized by X-ray diffraction and transmission electron microscopy. An increase in the hexagonal lattice parameters of ZnO is observed on increasing the Mn concentration. Optical absorption studies show an increment in the band gap with increasing Mn content, an...
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We report magnetoresistance (MR) manipulation and sign reversal induced by carrier concentration modulation in Mn-doped ZnO nanowires. At low temperatures positive magnetoresistance was initially observed. When the carrier concentration was increased through the application of a gate voltage, the magnetoresistance also increased and reached a maximum value. However, further increasing the carri...
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We report the structure and magnetic properties of Zn1–xMnxO thin fi lms grown on Si(001) substrates by pulsed laser deposition. Structure and phase evolution with Mn doping has been studied using x-ray diffraction, electron diffraction, and high-resolution electron microscopy. The undoped and 1% Mn-doped ZnO fi lms are completely (001) oriented, and further Mn doping deteriorates the (001) ori...
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Zinc oxide (ZnO) is a promising metal oxide semiconductor with various applications, especially in the photocatalytic destruction of environmental pollutants. However, this nanoparticle has some limitations, such as poor dispersion, aggregation, and a wide energy gap. As such, the doping of metal oxide semiconductor has been strongly recommended. Addition of manganese (Mn) has proven effective ...
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ژورنال
عنوان ژورنال: Nanomaterials
سال: 2015
ISSN: 2079-4991
DOI: 10.3390/nano5020885